. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Optimizedswitchingbehaviorathighercurrents
•CommutationrobustfastbodydiodewithlowQrr
•Superiorgateoxidereliability
•Bestthermalconductivityandbehavior
•LowerRDS(on)andpulsecurrentdependencyontemperature
•Increasedavalanchecapability
•Compatiblewithstandarddrivers(recommendeddrivingvoltage:18V)
Benefits
•Uniquecombinationofhighperformance,highreliabilityandeaseofuse
•Easeofuseandintegration
•Suitablefortopologieswithcontinuoushardcommutation
•Higherrobustnessandsystemreliability
•Efficiencyimprovement
•Reducedsystemsize.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IMW65R007M2H |
Infineon |
MOSFET | |
2 | IMW65R015M2H |
Infineon |
MOSFET | |
3 | IMW65R020M2H |
Infineon |
MOSFET | |
4 | IMW65R027M1H |
Infineon |
MOSFET | |
5 | IMW65R040M2H |
Infineon |
MOSFET | |
6 | IMW65R050M2H |
Infineon |
MOSFET | |
7 | IMW120R007M1H |
Infineon |
MOSFET | |
8 | IMW120R020M1H |
Infineon |
MOSFET | |
9 | IMW120R030M1H |
Infineon |
MOSFET | |
10 | IMW120R045M1 |
Infineon |
1200V SiC Trench MOSFET | |
11 | IMW120R060M1H |
Infineon |
Silicon Carbide MOSFET | |
12 | IMW120R090M1H |
Infineon |
Silicon Carbide MOSFET |