. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Ultra-lowswitchinglosses
•Benchmarkgatethresholdvoltage,VGS(th)=4.5V
•Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
•Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme
•Robustbodydiodeoperationunderhardcommutationevents
•.XTinterconnectiontechnologyforbest-in-classthermalperformance
Benefits
•Enableshighefficiencyandhighpowerdensitydesigns
•Facilitatesgreateaseofuseandintegration
•ProvidesthebestpriceperformanceratiocomparedtoIndustry’smost ambitiousroadmaps
•Reducesthesize,weightandbillofmat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IMW65R007M2H |
Infineon |
MOSFET | |
2 | IMW65R015M2H |
Infineon |
MOSFET | |
3 | IMW65R020M2H |
Infineon |
MOSFET | |
4 | IMW65R027M1H |
Infineon |
MOSFET | |
5 | IMW65R040M2H |
Infineon |
MOSFET | |
6 | IMW65R107M1H |
Infineon |
MOSFET | |
7 | IMW120R007M1H |
Infineon |
MOSFET | |
8 | IMW120R020M1H |
Infineon |
MOSFET | |
9 | IMW120R030M1H |
Infineon |
MOSFET | |
10 | IMW120R045M1 |
Infineon |
1200V SiC Trench MOSFET | |
11 | IMW120R060M1H |
Infineon |
Silicon Carbide MOSFET | |
12 | IMW120R090M1H |
Infineon |
Silicon Carbide MOSFET |