. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Optimizedswitchingbehaviorathighercurrents
•CommutationrobustfastbodydiodewithlowQf
•Superiorgateoxidereliability
•Tj,max=175°Candexcellentthermalbehavior
•LowerRDS(on)andpulsecurrentdependencyontemperature
•Increasedavalanchecapability
•Compatiblewithstandarddrivers(recommendeddrivingvoltage:0V-18V)
•Kelvinsourceprovidesupto4timeslowerswitchinglosses
Benefits
•Uniquecombinationofhighperformance,highreliabilityandeaseofuse
•Easeofuseandintegration
•Suitablefortopologieswithcontinuoushardcommutation
•Higherrobustness.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IMBG65R007M2H |
Infineon |
MOSFET | |
2 | IMBG65R015M2H |
Infineon |
600V G2 MOSFET | |
3 | IMBG65R020M2H |
Infineon |
MOSFET | |
4 | IMBG65R040M2H |
Infineon |
MOSFET | |
5 | IMBG65R050M2H |
Infineon |
MOSFET | |
6 | IMBG120R008M2H |
Infineon |
Silicon Carbide MOSFET | |
7 | IMBG120R012M2H |
Infineon |
1200V SiC MOSFET | |
8 | IMBG120R026M2H |
Infineon |
1200V SiC MOSFET | |
9 | IMBG120R045M1H |
Infineon |
1200V SiC Trench MOSFET | |
10 | IMBG120R053M2H |
Infineon |
1200V SiC MOSFET | |
11 | IMBG120R078M2H |
Infineon |
1200V SiC MOSFET | |
12 | IMBG120R234M2H |
Infineon |
Silicon Carbide MOSFET |