Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Ultra-lowswitchinglosses
•Benchmarkgatethresholdvoltage,VGS(th)=4.5V
•Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
•Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme
•Robustbodydiodeoperationunderhardcommutationevents
•.XTinterconnectiontechnologyforbest-in-classthermalperformance
Benefits
•Enableshighefficiencyandhighpowerdensitydesigns
•Facilitatesgreateaseofuseandintegration
•ProvidesthebestpriceperformanceratiocomparedtoIndustry’smost ambitiousroadmaps
•Reducesthesize,weightandbillofmat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IMBG65R015M2H |
Infineon |
600V G2 MOSFET |
|
| 2 | IMBG65R020M2H |
Infineon |
MOSFET |
|
| 3 | IMBG65R040M2H |
Infineon |
MOSFET |
|
| 4 | IMBG65R050M2H |
Infineon |
MOSFET |
|
| 5 | IMBG65R163M1H |
Infineon |
MOSFET |
|
| 6 | IMBG120R008M2H |
Infineon |
Silicon Carbide MOSFET |
|
| 7 | IMBG120R012M2H |
Infineon |
1200V SiC MOSFET |
|
| 8 | IMBG120R026M2H |
Infineon |
1200V SiC MOSFET |
|
| 9 | IMBG120R045M1H |
Infineon |
1200V SiC Trench MOSFET |
|
| 10 | IMBG120R053M2H |
Infineon |
1200V SiC MOSFET |
|
| 11 | IMBG120R078M2H |
Infineon |
1200V SiC MOSFET |
|
| 12 | IMBG120R234M2H |
Infineon |
Silicon Carbide MOSFET |
|