IMBG40R015M2H - Infineon

IMBG40R015M2H MOSFET

. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .

Features

• Ideal for high frequency switching and synchronous rectification
• Commutation robust fast body diode with low Qfr
• Low RDS(on) dependency on temperature
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Recommended gate driving voltage 0 V to 18 V
• .XT interconnection technology for best‑in‑class thermal performance
• 100% avalanche tested Potential applications
• SMPS
• Solar PV inverters
• Energy storage, UPS and battery formation
• Class‑D audio
• Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),typ ID Qos.