IKWH50N65EH7 - Infineon

IKWH50N65EH7 IGBT

C Type IKWH50N65EH7 G E Package PG-TO247-3-STD-NN4.8 Marking K50EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-27 IKWH50N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Table of contents Table of contents Description . . . . ..

Features

• VCE = 650 V
• IC = 50 A
• Low switching losses
• Very low collector-emitter saturation voltage VCEsat
• Very soft, fast recovery antiparallel diode
• Smooth switching behavior
• Humidity robustness
• Optimized for hard switching, two- and three-level topologies
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications
• Industrial UPS
• EV-Charging
• String inverter
• Welding Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 TO-247 HCC
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