IKW03N120H2 - Infineon Technologies

IKW03N120H2 HighSpeed 2-Technology

IKP03N120H2, IKW03N120H2 www.DataSheet4U.com IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - t.

Features

temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) °C VGE Ptot IF 9.6 3.9 ±20 62.5 V W ICpuls Symbol VCE IC 9.6 3.9 9.9 9.9 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 3A 3A 3A Eoff 0.15mJ 0.15mJ 0.15mJ Tj 150°C 150°C 150°C Package P-TO-247 P-TO-220-3-1 P-TO-263 (D PAK) 2 Ordering Code Q67040-S4595 Q67040-S4594 Q67040-S4597 Power Semiconductors 1 Rev. 2, Mar-04 IKP03N120H2, IKW03N120H2 www.DataSheet4U.com IKB03N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
  – case Diode thermal resistance, junction - case Thermal.