IKW50N60T - Infineon Technologies

IKW50N60T IGBT

IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTO.

Features

 Very low VCE(sat) 1.5V (typ.)
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 Designed for : - Frequency Converters - Uninterrupted Power Supply
 TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed
 Positive temperature coefficient in VCE(sat)
 Low EMI
 Low Gate Charge
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode
 Qualified according to JEDEC1 for target applications
 Pb-free lead plating; RoHS compliant
 Comp.