. . . . . . . . . 2 Table of Contents . . . . 3 Maximum Ratings . . . . .
andBenefits:
C
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoAEC-Q101
•Greenpackage(RoHScompliant)
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
G E
Applications:
•Batterycharger
•DC/DCconverter Packagepindefinition:
12 3
•Pin1-gate
•Pin2&backside-collector.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IKW40N65H5 |
Infineon |
IGBT | |
2 | IKW40N65ES5 |
Infineon |
IGBT | |
3 | IKW40N65F5 |
Infineon |
IGBT | |
4 | IKW40N65F5A |
Infineon |
IGBT | |
5 | IKW40N65WR5 |
Infineon |
Reverse conducting IGBT | |
6 | IKW40N60DTP |
Infineon |
IGBT | |
7 | IKW40N60H3 |
Infineon |
IGBT | |
8 | IKW40N120H3 |
Infineon |
IGBT | |
9 | IKW40N120T2 |
Infineon |
IGBT | |
10 | IKW40T120 |
Infineon Technologies |
IGBT | |
11 | IKW03N120H2 |
Infineon Technologies |
HighSpeed 2-Technology | |
12 | IKW08T120 |
Infineon Technologies |
IGBT |