IHW30N65R6 - Infineon

IHW30N65R6 IGBT

C Type IHW30N65R6 G Package PG-TO247-3 E Marking H30ER6 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.20 2021-03-22 IHW30N65R6 Reverse-Conducting IGBT Table of contents Table of contents Description . . . . . . . ..

Features

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
• Easy parallel switching capability due to positive temperature coefficient in VCEsat
• High ruggedness and stable temperature behavior
• Low EMI
• Pb-free lead plating; RoHS compliant
• Powerful monolithic reverse-conducting diode with low forward voltage
• Very low VCEsat and low Eoff
• Very tight parameter distribution Potential applications
• Induction Cooking
• Microwave Ovens Product validation
• Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 G C E D.