IHW30N100R - Infineon Technologies

IHW30N100R Reverse Conducting IGBT

www.DataSheet4U.com Soft Switching Series IHW30N100R q C Reverse Conducting IGBT with monolithic body diode Features: • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high rugg.

Features

• 1.5V Forward voltage of monolithic body Diode
• Full Current Rating of monolithic body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI 1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant Applications:
• Microwave Oven
• Soft Switching Applications Type IHW30N100R VCE 1000V IC 30A VCE(sat),Tj=25°C 1.5V Tj,max 175°C .