IGLR60R260D1 - Infineon

IGLR60R260D1 Power Transistor

IGLR60R260D1 IGLR60R260D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards.

Features

 Enhancement mode transistor
  – Normally OFF switch
 Ultra fast switching
 No reverse-recovery charge
 Capable of reverse conduction
 Low gate charge, low output charge
 Superior commutation ruggedness
 Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits
 Improves system efficiency
 Improves power density
 Enables higher operating frequency
 System cost reduction savings
 Reduces EMI Gate 4 Drain 5 Kelvin Source 3 Source 1,2 Applications Industrial and consumer SMPS based on the half-bridge topology (half-bridge topologies for ha.