IGLD60R190D1S - Infineon

IGLD60R190D1S Power Transistor

IGLD60R190D1S IGLD60R190D1S 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for standard grade applications according to JEDEC Sta.

Features

 Enhancement mode transistor
  – Normally OFF switch
 Ultra fast switching
 No reverse-recovery charge
 Capable of reverse conduction
 Low gate charge, low output charge
 Superior commutation ruggedness
 Qualified for standard grade applications according to JEDEC Standards Benefits
 Improves system efficiency
 Improves power density
 Enables higher operating frequency
 System cost reduction savings
 Reduces EMI D D D D 1 G SK S S S S SK G 8 Gate Drain Kelvin Source Source 8 1,2,3,4 7 5,6 Applications Consumer SMPS and high density chargers based on the half-bridge topology (ha.