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Pin definition: • Pin 1 and backside - Cathode • Pin 2 - Anode 1 CASE 2 Type IDWD75E120D7 Package PG-TO247-2-STD-NA8.8 Marking E75MD7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-12-15 IDWD75E120D7 Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode Tab.
• VRRM = 1200 V
• IF = 75 A
• 1200 V emitter controlled technology
• Maximum junction temperature Tvjmax = 175°C
• Low forward voltage (VF)
• Low reverse recovery charge
• Ultrafast recovery times
• Soft recovery characteristics
• Pb-free lead plating; RoHS compliant
• Humidity robust design
Potential applications
• String inverter
• EV-Charging
• Heat pump
2021-10-27
restricted
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Copyright © Infineon Technologies AG 20
Description Pin definition:
• Pin 1 and backside - Cathode
• Pin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IDWD100E120D7 |
Infineon |
Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode |
|
| 2 | IDWD10G120C5 |
Infineon |
1200V Schottky Diode |
|
| 3 | IDWD150E65E7 |
Infineon |
The Soft 650 V Emitter Controlled Si Diode |
|
| 4 | IDWD20E65E7 |
Infineon |
The Soft 650 V Emitter Controlled Si Diode |
|
| 5 | IDWD30G120C5 |
Infineon |
1200V Schottky Diode |
|
| 6 | IDWD40G120C5 |
Infineon |
1200V Schottky Diode |
|
| 7 | IDWD50E120D7 |
Infineon |
Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode |
|
| 8 | IDWD60E65E7 |
Infineon |
The Soft 650V Emitter Controlled Si Diode |
|
| 9 | IDW100E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode |
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| 10 | IDW10G120C5B |
Infineon |
Silicon Carbide Schottky Diode |
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| 11 | IDW10G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes |
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| 12 | IDW12G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes |
|