Pin definition: • Pin 1 and backside - Cathode • Pin 2 - Anode 1 2 1 CASE 2 Type IDWD20E65E7 Package PG-TO247-2-STD-NA8.8 Marking E20EE7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-11-06 IDWD20E65E7 The Soft 650 V Emitter Controlled Si Diode 7 offers improved re.
• VRRM = 650 V
• IF = 20 A
• Low and temperature stable forward voltage (VF)
• Very soft and fast recovery
• Low reverse recovery current (Irrm)
• Humidity robust design
• Cosmic ray ruggedness
• Maximum junction temperature Tvjmax = 175°C
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/ec7/
Potential applications
• String and micro inverter
• Datacenter UPS
• Offline UPS/Residential UPS
• Online UPS/Industrial UPS
• Residential aircon
• Welding
Product validation
• Qualified fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDWD100E120D7 |
Infineon |
Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode | |
2 | IDWD10G120C5 |
Infineon |
1200V Schottky Diode | |
3 | IDWD150E65E7 |
Infineon |
The Soft 650 V Emitter Controlled Si Diode | |
4 | IDWD30G120C5 |
Infineon |
1200V Schottky Diode | |
5 | IDWD40G120C5 |
Infineon |
1200V Schottky Diode | |
6 | IDWD50E120D7 |
Infineon |
Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode | |
7 | IDWD60E65E7 |
Infineon |
The Soft 650V Emitter Controlled Si Diode | |
8 | IDWD75E120D7 |
Infineon |
1200V Emitter controlled 7 diode | |
9 | IDW100E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
10 | IDW10G120C5B |
Infineon |
Silicon Carbide Schottky Diode | |
11 | IDW10G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes | |
12 | IDW12G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes |