IDT71V67602 - Integrated Device Technology

IDT71V67602 3.3V Synchronous SRAMs

The IDT71V67602/7802 are high-speed SRAMs organized as 256K x 36/512K x 18. The IDT71V676/78 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the sys.

Features

256K x 36, 512K x 18 memory configurations Supports high system speed:
  – 166MHz 3.5ns clock access time
  – 150MHz 3.8ns clock access time
  – 133MHz 4.2ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.3V core power supply Power down controlled by ZZ input 2.5V I/O supply (VDDQ) Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array. Description The IDT71V67602/7802 are high-speed SRAMs organize.