IDK10G120C5 - Infineon

IDK10G120C5 Schottky Diode

 System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  Related Links: www.infineon.com/S.

Features

 Revolutionary semiconductor material - Silicon Carbide
 No reverse recovery current / no forward recovery
 Temperature independent switching behaviour
 Low forward voltage even at high operating temperature
 Tight forward voltage distribution
 Excellent thermal performance 1 2
 Extended surge current capability
 Specified dv/dt ruggedness
 Pb-free lead plating; RoHS compliant Potential applications Pin definition Pin 1 and backside: Cathode 1 Pin 2: Anode 2
 Drives
 Industrial power supplies: Industrial UPS
 Solar central inverters and Solar string inverter Product valida.