ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resu.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 20 mA2)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDK02G120C5 |
Infineon |
1200V Schottky Diode | |
2 | IDK02G65C5 |
Infineon |
Silicon Carbide Diode | |
3 | IDK03G65C5 |
Infineon |
Silicon Carbide Diode | |
4 | IDK04G65C5 |
Infineon |
Silicon Carbide Diode | |
5 | IDK05G120C5 |
Infineon |
1200V Schottky Diode | |
6 | IDK05G65C5 |
Infineon |
Silicon Carbide Diode | |
7 | IDK06G65C5 |
Infineon |
Silicon Carbide Diode | |
8 | IDK08G120C5 |
Infineon |
1200V Schottky Diode | |
9 | IDK08G65C5 |
Infineon |
Silicon Carbide Diode | |
10 | IDK10G120C5 |
Infineon |
Schottky Diode | |
11 | IDK10G65C5 |
Infineon |
Silicon Carbide Diode | |
12 | IDK12G65C5 |
Infineon |
Silicon Carbide Diode |