IDH20G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improv.
Best in class forward voltage (1.25 V)
Best in class figure of merit (Qc x VF)
High dv/dt ruggedness (150 V/ns)
Benefits
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density
Potential Applications
Power factor correction in SMPS
Solar inverter
Uninterruptible power supply
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)
Final Datasheet
Please read the Important Notice and Warnings at the end of this do.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDH20G65C5 |
Infineon |
Silicon Carbide Diode | |
2 | IDH20G120C5 |
Infineon |
Diode | |
3 | IDH-20PK1-Sx |
RN |
4 Sided .025 sq. Post Headers | |
4 | IDH-50LP-xx |
RN |
Low Profile Headers | |
5 | IDH02G120C5 |
Infineon |
Diode | |
6 | IDH02G65C5 |
Infineon |
650V SiC Schottky Diode | |
7 | IDH02SG120 |
Infineon Technologies |
Schottky Diode | |
8 | IDH03G65C5 |
Infineon |
Silicon Carbide Diode | |
9 | IDH03SG60C |
Infineon Technologies |
Schottky Diode | |
10 | IDH04G65C5 |
Infineon |
Silicon Carbide Diode | |
11 | IDH04G65C6 |
Infineon |
SiC Schottky Diode | |
12 | IDH04S60C |
Infineon Technologies |
Schottky Diode |