IDD10SG60C - Infineon Technologies

IDD10SG60C Schottky Diode

3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • B.

Features

• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS IDD10SG60C 600 V 16.