3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • B.
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
Product Summary VDC QC IF; TC< 130 °C
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
IDD04SG60C
600 V 4..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IDD04S60C |
Infineon Technologies |
Schottky Diode | |
2 | IDD04E120 |
Infineon Technologies |
Fast Switching EmCon Diode | |
3 | IDD03E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
4 | IDD03SG60C |
Infineon Technologies |
Schottky Diode | |
5 | IDD05SG60C |
Infineon Technologies |
Schottky Diode | |
6 | IDD05U |
Chinfa Electronics Ind |
DC - DC CONVERTER 5 ~ 6W SINGLE & DUAL OUTPUT | |
7 | IDD06E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
8 | IDD06E60 |
INCHANGE |
Fast Recovery Rectifier | |
9 | IDD06SG60C |
Infineon Technologies |
Schottky Diode | |
10 | IDD08SG60C |
Infineon Technologies |
Schottky Diode | |
11 | IDD09E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
12 | IDD09SG60C |
Infineon Technologies |
Schottky Diode |