IDD09E60 - Infineon Technologies

IDD09E60 Fast Switching Emitter Controlled Diode

and charts stated herein. TInhfeineionnfoTrmecahtnioonloggieivseins ainnapthpirsovdedocCuEmCeCntmasnhuaflal citnurenro. event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any iInnffoorrmmaatitoionn regarding the application of the device, Infineon Tec.

Features

pCe=r9a0ti°nCg junction temperature Tj SOtopraegraettienmgpaenradtusretorage temperature SSooldldereinrgintgemtepmerpaeturraeture 1r.e6fmlomw(0s.o0l6d3eirnin.)gfr,oMmScLas3e for 10 s Tj , TTssttgg TS TS VaVlualeue 606000 191.39.3 1313 4040 292.59.5 57.7 573.72.7 -3402….7+175 -55-5..5.+...1+71550 262060 UUnint it VV A A A A WW °C°C °C Rev. 2.4 Page 1 2013­12­05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) IDD09E60 Symbol Values Unit min. typ. max. RthJC - - 2.6 K/W RthJA .