• • The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16Fast access and cycle time bit high-performance CMOS Dynamic Random Access TTL compatible inputs and outputs Memory. Fast Page Mode allows 256 random accesses Refresh Interval: 256 cycles/4 ms within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upp.
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DESCRIPTION
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The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16Fast access and cycle time bit high-performance CMOS Dynamic Random Access TTL compatible inputs and outputs Memory. Fast Page Mode allows 256 random accesses Refresh Interval: 256 cycles/4 ms within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower Refresh Mode: RAS-Only, CAS-before-RAS byte, makes these devices ideal for use in 16-, 32-bit wide (CBR), Hidden data bus systems. JEDEC standard pinout These features make the IC41C1665 and the IC41LV1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IC41C16100A |
ICSI |
1M x 16 (16-MBIT) DYNAMIC RAM | |
2 | IC41C16105 |
ICSI |
1M X 16 (16-MBIT) DYNAMIC RAM | |
3 | IC41C16256 |
ICSI |
256Kx16 bit Dynamic RAM | |
4 | IC41C16257 |
ICSI |
256K x 16 (4-MBIT) DYNAMIC RAM | |
5 | IC41C16257 |
Integrated Circuit Solution |
256Kx16 bit Dynamic RAM with Fast Page Mode | |
6 | IC41C16257S |
Integrated Circuit Solution |
256Kx16 bit Dynamic RAM with Fast Page Mode | |
7 | IC41C44002A |
ICSI |
4M x 4 (16-MBIT) DYNAMIC RAM | |
8 | IC41C44002A |
Integrated Silicon Solution |
4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | |
9 | IC41C44002AS |
Integrated Silicon Solution |
4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | |
10 | IC41C44002ASL |
Integrated Silicon Solution |
4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | |
11 | IC41C4400x |
ICSI |
4Mx4 bit Dynamic RAM | |
12 | IC41C4405x |
ICSI |
4Mx4 bit Dynamic RAM |