The 1+51 IC41C16105 and IC41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. .ast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IC41C16105 ideal for use in 16-, 32-bit wide data bus systems. Th.
make the IC41C16105 and IC41LV16105 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IC41C16105 and IC41LV16105 are packaged in a 42-pin 400mil SOJ and 400mil 44- (50-) pin TSOP-2. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. .ast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -50 50 13 25 20 84 -60 60 15 30 25 104 Unit ns ns ns ns ns PIN CON.IGURATIONS 44(50)-Pin TSOP-2 VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IC41C16100A |
ICSI |
1M x 16 (16-MBIT) DYNAMIC RAM | |
2 | IC41C16256 |
ICSI |
256Kx16 bit Dynamic RAM | |
3 | IC41C16257 |
ICSI |
256K x 16 (4-MBIT) DYNAMIC RAM | |
4 | IC41C16257 |
Integrated Circuit Solution |
256Kx16 bit Dynamic RAM with Fast Page Mode | |
5 | IC41C16257S |
Integrated Circuit Solution |
256Kx16 bit Dynamic RAM with Fast Page Mode | |
6 | IC41C1665 |
ICSI |
64K x16 bit Dynamic RAM | |
7 | IC41C44002A |
ICSI |
4M x 4 (16-MBIT) DYNAMIC RAM | |
8 | IC41C44002A |
Integrated Silicon Solution |
4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | |
9 | IC41C44002AS |
Integrated Silicon Solution |
4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | |
10 | IC41C44002ASL |
Integrated Silicon Solution |
4M x 4 bit DYNAMIC RAM WITH EDO PAGE MODE | |
11 | IC41C4400x |
ICSI |
4Mx4 bit Dynamic RAM | |
12 | IC41C4405x |
ICSI |
4Mx4 bit Dynamic RAM |