HZS-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0166-0300 Rev.3.00 Nov 06, 2007 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide voltage range from 5.2.
• Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
• Wide voltage range from 5.2 V through 38 V of zener voltage provide flexible application.
• Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Part No. HZS-L Series
Cathode Band Black
Package Name MHD
Package Code GRZZ0002ZC-A
Pin Arrangement
B
7
12
2
Part No.
Cathode band
1. Cathode 2. Anode
REJ03G0166-0300 Rev.3.00 Nov 06, 2007 Page 1 of 5
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HZS11A3 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
2 | HZS11A1 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
3 | HZS11A1L |
Renesas |
Silicon Planar Zener Diode | |
4 | HZS11A2 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
5 | HZS11A2L |
Renesas |
Silicon Planar Zener Diode | |
6 | HZS11 |
Renesas |
Silicon Epitaxial Planar Zener Diode | |
7 | HZS11 |
Hitachi |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply | |
8 | HZS11B1 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
9 | HZS11B1L |
Renesas |
Silicon Planar Zener Diode | |
10 | HZS11B2 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
11 | HZS11B2L |
Renesas |
Silicon Planar Zener Diode | |
12 | HZS11B3 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES |