HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply min. 27.5 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. • Suitable for 5mm-pitch speed automatic insertio.
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc.
• Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
• Suitable for 5mm-pitch speed automatic insertion.
White Cathode Band Part No. Black Color
max. 1.9
max. 0.45
Glass case JEDEC DO-34 Dimensions in mm
min. 27.5
max. 2.9
Absolute Maximum Ratings (Ta = 25 OC)
Power Dissipation Junction Temperature Storage Temperature Range
Symbol Ptot Tj TS
Value 400 200 -55 to +175
Unit mW OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HZS11A1 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
2 | HZS11A1L |
Renesas |
Silicon Planar Zener Diode | |
3 | HZS11A2 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
4 | HZS11A2L |
Renesas |
Silicon Planar Zener Diode | |
5 | HZS11A3L |
Renesas |
Silicon Planar Zener Diode | |
6 | HZS11 |
Renesas |
Silicon Epitaxial Planar Zener Diode | |
7 | HZS11 |
Hitachi |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply | |
8 | HZS11B1 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
9 | HZS11B1L |
Renesas |
Silicon Planar Zener Diode | |
10 | HZS11B2 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES | |
11 | HZS11B2L |
Renesas |
Silicon Planar Zener Diode | |
12 | HZS11B3 |
SEMTECH |
SILICON EPITAXIAL PLANER ZENER DIODES |