DRAM (access time 50 ns) DRAM (access time 60 ns) P-SOJ-26/20-2 V SS DO CAS N.C. A9 DI WE RAS N.C. A10 1 2 3 4 5 26 25 24 23 22 A0 A1 A2 A3 V CC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 SPP02808 Pin Configuration Pin Names A0 – A10 RAS CAS WE DI DO Address Input Row Address Strobe Column Address Strobe Read/Write Input Data In Data Out Power Su.
include single + 5 V (± 10 %) power supply, direct interfacing with high performance logic device families such as Schottky TTL. Type HYB 514100BJ-50 HYB 514100BJ-60 Ordering Code Q67100-Q971 Q67100-Q759 Package P-SOJ-26/20-2 300 mil P-SOJ-26/20-2 300 mil Descriptions DRAM (access time 50 ns) DRAM (access time 60 ns)
P-SOJ-26/20-2
V SS DO CAS N.C. A9
DI WE RAS N.C. A10
1 2 3 4 5
26 25 24 23 22
A0 A1 A2 A3 V CC
9 10 11 12 13
18 17 16 15 14
A8 A7 A6 A5 A4
SPP02808
Pin Configuration Pin Names A0
– A10 RAS CAS WE DI DO Address Input Row Address Strobe Column Address Strobe Read/Write Inp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HYB514100BJ-60 |
Siemens |
4M x 1-Bit Dynamic RAM | |
2 | HYB514171BJ-50 |
Siemens |
256k x 16-Bit Dynamic RAM | |
3 | HYB514171BJ-60 |
Siemens |
256k x 16-Bit Dynamic RAM | |
4 | HYB514175BJ-50 |
Siemens |
256k x 16-Bit EDO-DRAM | |
5 | HYB514175BJ-55 |
Siemens |
256k x 16-Bit EDO-DRAM | |
6 | HYB514175BJ-60 |
Siemens |
256k x 16-Bit EDO-DRAM | |
7 | HYB514256B |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM | |
8 | HYB514256BJ-50 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM | |
9 | HYB514256BJ-60 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM | |
10 | HYB514256BJ-70 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM | |
11 | HYB514256BJL-50 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM | |
12 | HYB514256BJL-60 |
Siemens |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |