HYB5116165BJ-70 - Siemens

HYB5116165BJ-70 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5116(8)165BSJ-50/-60/-70 1M x 16-EDO DRAM P-SOJ-42-1 400 mil Vcc I/O1 I/O2 I/O3 I/O4 Vcc I/O5 I/O6 I/O7 I/O8 N.C. N.C. WE RAS N.C. N.C. A0 A1 A2 A3 Vcc 1 2 3 4 5 .

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116165BJ-50 HYB 5116165BJ-60 HYB 5116165BJ-70 HYB 5118165BJ-50 HYB 5118165BJ-60 HYB 5118165BJ-70 Pin Names A0-A9 A0-A9 A0-A11 A0 to A7 RAS OE I/O1-I/O16 UCAS LCAS WE Row Address Inputs for HYB5118165BSJ Column Address Inputs for HYB5118165BSJ Row Address Inputs for HYB5116165BSJ Column Address Inputs for HYB5116165BSJ Row Address Strobe Output Enable Data Input/Output Upper Column Address Strobe Lower Column Address Strobe Read/Write In.