HYB511000BJL-50 - Siemens

HYB511000BJL-50 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group 33 01.95 HYB 511000BJ/BJL-50/-60/-70 1 M × 1-DRAM The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by 1-bit. The HYB 511000BJ/BJL utilizes CMOS silico.

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for low power battery backup applications. Pin Definitions and Functions Pin No. A0-A9 RAS DI DO CAS WE Function Address Inputs Row Address Strobe Data In Data Out Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) Test Function No Connection VCC VSS TF N.C. Semiconductor Group 34 HYB 511000BJ/BJL-50/-60/-70 1 M × 1-DRAM Pin Configuration (top view) SOJ-26/20-1 .