HYB39S256400DTL - Infineon Technologies

HYB39S256400DTL (HYB39S256xxxD) 256 MBit Synchronous DRAM

HYB 39S256400DT-6 HYB 39S256400DT-7 HYB 39S256400DT-7.5 HYB 39S256400DT-8 HYB 39S256800DT-6 HYB 39S256800DT-7 HYB 39S256800DT-7.5 HYB 39S256800DT-8 HYB 39S256160DT-6 HYB 39S256160DT-7 HYB 39S256160DT-7.5 HYB 39S256160DT-8 HYB39S256800DTL-x HYB39S256160DTL-x www.DataSheet4U.com PC166-333-520 PC133-222-520 PC133-333-520 PC100-222-620 PC166-333-520 PC133-222-.

Features

Programmable Burst Length: 1, 2, 4, 8 and full page Multiple Burst Read with Single Write Operation Automatic Command and Controlled Precharge www.DataSheet4U.com The HYB39S256400/800/160DT(L) are four bank Synchronous DRAM’s organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with INFINEON’s advanced 0.14 µm 256MBit DRAM process t.