HYB39S256400CT - Infineon Technologies

HYB39S256400CT (HYB39S256xxxCT) 256 MBit Synchronous DRAM

HYB 39S256400CT-7.5 HYB 39S256400CT-8 HYB 39S256800CT-7.5 HYB 39S256800CT-8 HYB 39S256160CT-7.5 HYB 39S256160CT-8 HYB39S256xx0CTL PC133-333-520 PC100-222-620 PC133-333-520 PC100-222-620 PC133-333-520 PC100-222-620 PC100-xxx-620 P-TSOP-54-2 (400mil) P-TSOP-54-2 (400mil) P-TSOP-54-2 (400mil) P-TSOP-54-2 (400mil) P-TSOP-54-2 (400mil) P-TSOP-54-2 (400mil) P-T.

Features

ial wrap around www.DataSheet4U.com The HYB39S256400/800/160CT(L) are four bank Synchronous DRAM’s organized as 4 banks x 16MBit x4, 4 banks x 8MBit x8 and 4 banks x 4Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated with INFINEON’s advanced 0.17 µm 256MBit DRAM process technology. The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically an.