HYB39S128400CT - Infineon Technologies

HYB39S128400CT 128-MBit Synchronous DRAM

PC133-222-520 P-TSOP-54 (400mil) 143MHz 4B × 8M x4 SDRAM PC133-333-520 P-TSOP-54 (400mil) 133 MHz 4B × 8M x4 SDRAM PC100-222-620 P-TSOP-54 (400mil) 100 MHz 4B × 8M x4 SDRAM PC133-222-520 P-TSOP-54 (400mil) 143 MHz 4B × 4M x8 SDRAM PC133-333-520 P-TSOP-54 (400mil) 133 MHz 4B × 4M x8 SDRAM PC100-222-620 P-TSOP-54 (400mil) 100 MHz 4B × 4M x8 SDRAM PC133-222-52.

Features

7.5 for PC 133 3-3-3 applications -8 for PC100 2-2-2 applications The HYB 39S128400/800/160CT are four bank Synchronous DRAM’s organized as 4 banks × 8MBit x4, 4 banks × 4MBit x8 and 4 banks × 2Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated using the Infineon advanced 0.17 micron process technology. The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically .