HYB3164405TL-60 - Siemens Semiconductor Group

HYB3164405TL-60 16M x 4-Bit Dynamic RAM

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 .

Features

addresses (HYB 3164405J/T(L)) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165405J/T(L)) Plastic Package: P-SOJ-34-1 500 mil HYB 3164(5)400J P-TSOPII-34-1 500 mil HYB 3164(5)400T Semiconductor Group 89 HYB3164(5)405J/T(L)-50/-60 16M x 4-DRAM This HYB3164(5)405 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405 operates with a single 3.3 +/-.