HYB3164405AJ-40 - Siemens Semiconductor Group

HYB3164405AJ-40 16M x 4-Bit Dynamic RAM

Semiconductor Group 2 HYB3164(5)405AJ/AT(L)-40/-50/-60 16M x 4-DRAM P-SOJ-32-1 (400 mil) P-TSOPII-32-1 (400 mil) VCC I/O1 I/O2 N.C. N.C. N.C. N.C. WE RAS . A0 A1 A2 A3 A4 A5 VCC O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS I/O4 I/O3 N.C. N.C. N.C. CAS OE A12 / N.C. * A11 A10 A9 A8 A7 A6 VSS * Pin 24 i.

Features

refresh (L-version only) 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164405AJ/AT) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165405AJ/AT) 256 msec refresh period for L-versions Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)400AJ P-TSOPII-32-1 400 mil HYB 3164(5)400AT(L) Semiconductor Group 1 6.97 HYB3164(5)405AJ/AT(L)-40/-50/-60 16M x 4-DRAM This HYB3164(5)405A is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process technology. The circuit and process design allow th.