and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 / Jun.01 Hynix Semiconductor HY62KF08401C Series DESCRIPTION The HY62KF08401C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits. The HY62KF08401C uses hi.
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup -. 1.2V(min) data retention
• Standard pin configuration -. 32 - sTSOP - 8X13.4(Standard)
Product No. HY62KF08401C-I
Voltage (V) 2.7~3.6
Speed (ns) 55/70
Operation Current/Icc(mA) 5
Standby Current(uA) LL SL 15 6
Temperature (°C) -40~85
Note 1. I : Industrial 2. Current value is max.
PIN CONNECTION
A11 A9 A8 A13 /WE A18 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY62KF08802B |
Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM | |
2 | HY62KF08802B-DD |
Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM | |
3 | HY62KF08802B-DDI |
Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM | |
4 | HY62KF08802B-SD |
Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM | |
5 | HY62KF08802B-SDI |
Hynix Semiconductor |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM | |
6 | HY62KT08081E |
Hynix Semiconductor |
32Kx8bit CMOS SRAM | |
7 | HY6210 |
Hytek Microsystems |
200mA High Speed Laser Diode Driver | |
8 | HY62256A |
Hynix Semiconductor |
32Kx8bit CMOS SRAM | |
9 | HY62256A |
Hynix Semiconductor |
32K x 8-Bit CMOS SRAM | |
10 | HY62256A |
Hyundai |
32K x 8-Bit CMOS SRAM | |
11 | HY62256A |
Hyundai |
32K x 8-Bit CMOS SRAM | |
12 | HY62256A-I |
Hyundai |
32Kx8bit CMOS SRAM |