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HY62256A - Hyundai

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HY62256A 32K x 8-Bit CMOS SRAM

The HY62256A is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. The HY62256A has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5volt has little.

Features

Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min.) data retention
• Standard pin configuration - 28 pin 600 mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard and Reversed)



• Standby Current(uA) L LL 1mA 100 25 Temperature (°C) 0~70(Normal) PIN CONNECTION A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O.

The same part from a different manufacturer

Datasheet HY62256A - Hynix Semiconductor HY62256A

The HY62256A is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's .

Datasheet HY62256A - Hynix Semiconductor HY62256A

Features The Fully static operation and HY62256A/HY62256A-I Tri-state outputs is a high-speed, low TTL compatible inputs.

Datasheet HY62256A - Hyundai HY62256A

The HY62256A is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundai's .

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