HY5S5B6ELFP-SE - Hynix Semiconductor

HY5S5B6ELFP-SE 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jul. 2005 1 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6ELF(P)-xE Series DESCRIPTION The Hynix Low Power SDRAM(Mobile SDR) is suited for non-PC application which use the batteries such as PDAs, 2.5G a.

Features

Standard SDRAM Protocol
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● Programmable CAS latency of 1, 2 or 3 -25oC ~ 85oC Operation Package Type : 54ball, 0.8mm pitch FBGA (Lead Free, Lead) Internal 4bank operation Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage interface to reduce I/O power Low Power Features PASR(Partial Array Self Refresh) Auto TCSR (Temperature Compensated Self Refresh) DS (Drive Strength) Deep Power Down Mode
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● - HY5S5B6ELFP : Lead Free - HY5S5B6ELF : Lead
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● - 256M SDRAM ORDERING INFORMATION Part Number HY5S5B6ELF-HE HY5S5B6ELF-SE HY5S5B6ELFP-HE HY5S5B6.