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HY5012W - HOOYI

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HY5012W N-Channel Enhancement Mode MOSFET

HY5012W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 55 to 175 300 IDM Pulsed Drain Current * ID Con.

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