This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60 or 70ns) a.
are access time(50, 60 or 70ns) and refresh cycle(2K ref. or 4K ref.) and power consumption (Normal or Low power with self refresh). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability. FEATURES Ÿ Extended data out operation Ÿ Read-modify-write Capability Ÿ TTL compatible inputs and outputs Ÿ /CAS-before-/RAS, /RAS-only, Hidden and Self refresh capability Ÿ Max. Active power dissipation Speed 50 60 70 Ÿ Refresh cycle Part number HY5117404C HY5116404C Refresh 2K 4K Normal 32ms 256ms 64ms SL-part 2K ref.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY5116404B |
Hyundai Electronics |
(HY5116404B / HY5117404B) Extended Data Out Mode | |
2 | HY5116400B |
Hyundai Electronics |
(HY5116400B / HY5117400B) 4M x 4-Bit CMOS DRAM | |
3 | HY5116164B |
Hyundai |
(HY5116164B / HY5118164B) Extended Data Out mode | |
4 | HY5116164C |
Hyundai |
(HY5116164C / HY5118164C) Extended Data Out mode | |
5 | HY5116800B |
Hyundai Electronics |
(HY5116800B / HY5117800B) Fast Page Mode | |
6 | HY5116800C |
Hyundai Electronics |
(HY5116800C / HY5117800C) Fast Page Mode | |
7 | HY5116804B |
Hyundai Electronics |
(HY5116804B / HY5117804B) Extended Data Out Mode | |
8 | HY5117100 |
Hyundai Electronics |
16M x 1-Bit CMOS DRAM | |
9 | HY5117100A |
Hyundai Electronics |
16M x 1-Bit CMOS DRAM | |
10 | HY5117400 |
Hyundai Electronics |
4M x 4-Bit CMOS DRAM | |
11 | HY5117400A |
Hyundai Electronics |
4M x 4-Bit CMOS DRAM | |
12 | HY5117400B |
Hyundai Electronics |
(HY5116400B / HY5117400B) 4M x 4-Bit CMOS DRAM |