HY4004A - HOOYI

HY4004A N-Channel MOSFET

HY4004W/A Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 40 ±20 175 -55 to 175 208 IDM Pulsed Drain Current * ID Con.

Features

ain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON)
* Drain-Source On-state Resistance Diode Characteristics VGS=0V, IDS=250µA VDS=40V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=104A VSD
* trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=104 A, VGS=0V ISD=104A, dlSD/dt=100A/µs HY4004 Unit Min. Typ. Max. 40 - - V - - 1 µA - - 10 2.0 3.0 4.0 V - - ±100 nA - 2.4 3.0 mΩ - 0.8 1.2 V - 36 - ns - 58 - nC 2 HY4004W/A Electrical Characteristics (Cont.) (T C = 25°C Unless Otherwise Noted) .