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Features
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ain Current
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON)* Drain-Source On-state Resistance Diode Characteristics
VGS=0V, IDS=250µA VDS=40V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=104A
VSD * trr Qrr
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ISD=104 A, VGS=0V ISD=104A, dlSD/dt=100A/µs
HY4004 Unit
Min. Typ. Max.
40
-
-
V
-
-
1
µA
-
-
10
2.0 3.0 4.0 V
-
- ±100 nA
- 2.4 3.0 mΩ
- 0.8 1.2 V
-
36
-
ns
-
58
-
nC
2
HY4004W/A
Electrical Characteristics (Cont.)
(T C
=
25°C
Unless
Otherwise
Noted)
...
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HY4004A Data Sheet
