Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY3215P |
HOOYI |
N-Channel Enhancement Mode MOSFET |
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| 2 | HY3215PM |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | HY3215 |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | HY3215B |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | HY3215M |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 6 | HY3210B |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 7 | HY3210M |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 8 | HY3210P |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 9 | HY3210PM |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 10 | HY3210PS |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 11 | HY3208A |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 12 | HY3208B |
HOOYI |
N-Channel MOSFET |
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