HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current.
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY3210B |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
2 | HY3210M |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
3 | HY3210P |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
4 | HY3210PM |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
5 | HY3210PS |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
6 | HY3215B |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
7 | HY3215M |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
8 | HY3215P |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
9 | HY3215PM |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
10 | HY3215PS |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
11 | HY3208A |
HOOYI |
N-Channel Enhancement Mode MOSFET | |
12 | HY3208B |
HOOYI |
N-Channel MOSFET |