HY27US08121A - Hynix Semiconductor

HY27US08121A 512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory

& page.7 - The cache feature is deleted in summary description. - Note.3 is deleted. (page.7) 4) Add System interface using CE don’t care (page. 38) 5) Change TSOP1, WSOP1,FBGA package dimension & figures. Oct. 22. 2004 Preliminary - Change TSOP1, WSOP1, FBGA package mechanical data - Change TSOP1, WSOP package figures 6) Correct TSOP1, WSOP1 Pin configu.

Features

SUMMARY HIGH DENSITY NAND Flash MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27USXX121A - 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX121A Memory Cell Array = (512+16) Bytes x 32 Pages x 4,096 Blocks = (256+8) Words x 32 pages x 4,096 Blocks FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code CHIP ENABLE DON'T CARE OPTION - Simple interface with microc.