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HY27US08121A |
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| Part Number | HY27US08121A |
| Manufacturer | Hynix Semiconductor |
| Description | & page.7 - The cache feature is deleted in summary description. - Note.3 is deleted. (page.7) 4) Add System interface using CE don’t care (page. 38) 5) Change TSOP1, WSOP1,FBGA package dimension & fig... |
| Features |
SUMMARY
HIGH DENSITY NAND Flash MEMORIES - Cost effective solutions for mass storage applications
NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities
SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27USXX121A - 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX121A
Memory Cell Array = (512+16) Bytes x 32 Pages x 4,096 Blocks = (256+8) Words x 32 pages x 4,096 Blocks
FAST BLOCK ERASE - Block erase time: 2ms (Typ.)
STATUS REGISTER
ELECTRONIC SIGNATURE - Manufacturer Code - Device Code CHIP ENABLE DON'T CARE OPTION - Simple interface with microc... |
| Document |
 HY27US08121A Data Sheet
PDF 406.43KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY27US08121B |
Hynix Semiconductor |
512Mb NAND FLASH |
|
| 2 | HY27US08121M |
Hynix Semiconductor |
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
|
| 3 | HY27US08122B |
Hynix Semiconductor |
512Mb NAND FLASH |
|
| 4 | HY27US081G1M |
Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
|
| 5 | HY27US08281A |
Hynix Semiconductor |
(HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory |
|