HUFA75637S3S - Fairchild Semiconductor

HUFA75637S3S N-Channel MOSFET

HUFA75637P3, HUFA75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB Features DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models -.

Features

DRAIN (FLANGE)
• Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V
• Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve HUFA75637P3 HUFA75637S3S Symbol D
• UIS Rating Curve Ordering Information PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 75637P 75637S HUFA75637P3 G S HUFA75637S3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75637S3ST. Absolute Maximum Ratings TC = 25oC, Unless .