HUFA75631P3 - Fairchild Semiconductor

HUFA75631P3 N-Channel MOSFET

HUFA75631P3, HUFA75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal I.

Features

• Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V
• Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve GATE SOURCE DRAIN (FLANGE) HUFA75631P3 HUFA75631S3ST Symbol D Ordering Information PART NUMBER HUFA75631P3 G PACKAGE TO-220AB TO-263AB BRAND 75631P 75631S HUFA75631S3ST S NOTE: When ordering, use the entire part number, e.g., HUFA75631S3ST. TC = 25oC, Unless Otherwise Specified HUFA75631P3 HUFA75631S3ST UNITS V V V A A Absolute.