HUF76409P3 - Fairchild Semiconductor

HUF76409P3 N-Channel MOSFET

HUF76409P3 Data Sheet December 2001 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.062Ω, VGS = 10V - rDS(ON) = 0.070Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance.

Features

• Ultra Low On-Resistance - rDS(ON) = 0.062Ω, VGS = 10V - rDS(ON) = 0.070Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve DRAIN (FLANGE) HUF76409P3 Symbol D
• Switching Time vs RGS Curves Ordering Information G PART NUMBER S PACKAGE TO-220AB BRAND 76409P HUF76409P3 NOTE: When ordering, use the entire part number i.e., HUF76409P3 TC = 25oC, Unless Otherwise Specified HUF76409P3 Drain to Source Voltage (Note 1) . . . . ..