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HUF76407P3 - Fairchild Semiconductor

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HUF76407P3 N-Channel MOSFET

HUF76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance.

Features


• Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V
• Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve DRAIN (FLANGE) HUF76407P3 Symbol D
• UIS Rating Curve
• Switching Time vs RGS Curves G Ordering Information S PART NUMBER HUF76407P3 PACKAGE TO-220AB BRAND 76407P NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76407P3 UNITS V V V A A A A 60 60 ±16 12.

The same part from a different manufacturer

Datasheet HUF76407P3 - Intersil Corporation HUF76407P3

HUF76407P3 Data Sheet October 1999 File Number 4706.3 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET.

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