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HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-046E (Z) Rev 5 Jul 1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88AS Laser Mark C1 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 .
• Proof against high voltage.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM88AS Laser Mark C1 Package Code MPAK
Outline
3
2
1
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
HSM88AS
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO
*1
Value 10 15 125
–55 to +125
Unit V mA °C °C
Tj Tstg
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Symbol Min VF1 VF2 Reverse current I R1 I R2 Capacitance Capacitance devia.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HSM88ASR |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer |
|
| 2 | HSM880 |
Microsemi Corporation |
8 Amp Schottky Rectifier |
|
| 3 | HSM88WA |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer |
|
| 4 | HSM88WK |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode for Balanced Mixer |
|
| 5 | HSM8100 |
Microsemi Corporation |
8 Amp Schottky Rectifier |
|
| 6 | HSM825 |
Microsemi Corporation |
8 Amp Schottky Rectifier |
|
| 7 | HSM83 |
Hitachi Semiconductor |
Silicon Epitaxial Planar Diode for High Voltage Switching |
|
| 8 | HSM830 |
Microsemi Corporation |
8 Amp Schottky Rectifier |
|
| 9 | HSM835 |
Microsemi Corporation |
8 Amp Schottky Rectifier |
|
| 10 | HSM840 |
Microsemi Corporation |
8 Amp Schottky Rectifier |
|
| 11 | HSM845 |
Microsemi Corporation |
8 Amp Schottky Rectifier |
|
| 12 | HSM890 |
Microsemi Corporation |
8 Amp Schottky Rectifier |
|